The machinability of hard brittle nanocrystalline cubic silicon carbide (3C-SiC) is strongly dependent on internal microstructure and its adapted machining response. Here, we conducted molecular dynamic simulations to explore the machinability of nanotwinned 3C-SiC with a large number of twin boundaries in diamond cutting. The effect of the introduction of twin boundaries on the diamond cutting of nanocrystalline 3C-SiC, particular for its contribution to suppressing brittle fracture and improving ductile-mode cutting, was investigated in-depth. Our simulation results revealed that twin boundaries exerted a significant impact on the deformation mechanism and subsequent surface integrity of nanocrystalline 3C-SiC. Specifically, intergranular fracture was significantly suppressed by the introduction of twin boundaries. In addition, various deformation behaviors such as phase transformation, crack propagation, dislocation activity, and twin boundary-associated deformation mechanisms were operated in cutting process of nanotwinned 3C-SiC. Furthermore, the influence of twin boundary spacing on the diamond cutting characteristics of nanotwinned 3C-SiC was also addressed.
Citation: Liang Zhao, Weimian Guan, Jiwen Xu, Zhiyuan Sun, Maoda Zhang, Junjie Zhang. Atomistic investigation of effect of twin boundary on machinability in diamond cutting of nanocrystalline 3C-SiC[J]. AIMS Materials Science, 2024, 11(6): 1149-1164. doi: 10.3934/matersci.2024056
The machinability of hard brittle nanocrystalline cubic silicon carbide (3C-SiC) is strongly dependent on internal microstructure and its adapted machining response. Here, we conducted molecular dynamic simulations to explore the machinability of nanotwinned 3C-SiC with a large number of twin boundaries in diamond cutting. The effect of the introduction of twin boundaries on the diamond cutting of nanocrystalline 3C-SiC, particular for its contribution to suppressing brittle fracture and improving ductile-mode cutting, was investigated in-depth. Our simulation results revealed that twin boundaries exerted a significant impact on the deformation mechanism and subsequent surface integrity of nanocrystalline 3C-SiC. Specifically, intergranular fracture was significantly suppressed by the introduction of twin boundaries. In addition, various deformation behaviors such as phase transformation, crack propagation, dislocation activity, and twin boundary-associated deformation mechanisms were operated in cutting process of nanotwinned 3C-SiC. Furthermore, the influence of twin boundary spacing on the diamond cutting characteristics of nanotwinned 3C-SiC was also addressed.
[1] | Huang XMH, Zorman CA, Mehregany M, et al. (2023) Nanodevice motion at microwave frequencies. Nature 421: 496–497. https://doi.org/10.1038/421496a doi: 10.1038/421496a |
[2] | Yang X, Yang XZ, Sun RY, et al. (2019) Obtaining atomically smooth 4H-SiC (0001) surface by controlling balance between anodizing and polishing in electrochemical mechanical polishing. Nanomanuf Metrol 2: 140–147. https://doi.org/10.1007/s41871-019-00043-5 doi: 10.1007/s41871-019-00043-5 |
[3] | Mehregany M, Zorman CA, Rajan N, et al. (1998) Silicon carbide MEMS for harsh environments. P IEEE 86: 1594–1609. https://doi.org/10.1109/5.704265 doi: 10.1109/5.704265 |
[4] | Ekinci KL (2005) Electromechanical transducers at the nanoscale: actuation and sensing of motion in nanoelectromechanical systems (NEMS). Small 1: 786–97. https://doi.org/10.1002/smll.200500077 doi: 10.1002/smll.200500077 |
[5] | Yoon HS, Park B, Jun SC (2013) Surface roughness effects on the frequency tuning performance of a nanoelectromechanical resonator. Nanoscale Res Lett 8: 270. https://doi.org/10.1186/1556-276X-8-270 doi: 10.1186/1556-276X-8-270 |
[6] | Lee YJ, Wang H (2021) Characterizing crack morphology toward improving ductile material removal of calcium fluoride. Ceram Int 47: 28543–28556. https://doi.org/10.1016/j.ceramint.2021.07.012 doi: 10.1016/j.ceramint.2021.07.012 |
[7] | Luo XC, Goel S, Reuben RL (2012) A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide. J Eur Ceram Soc 32: 3423–3434. https://doi.org/10.1016/j.jeurceramsoc.2012.04.016 doi: 10.1016/j.jeurceramsoc.2012.04.016 |
[8] | Wu ZH, Liu WD, Zhang LC (2017) Revealing the deformation mechanisms of 6H-silicon carbide under nano-cutting. Comp Mater Sci 137: 282–288. https://doi.org/10.1016/j.commatsci.2017.05.048 doi: 10.1016/j.commatsci.2017.05.048 |
[9] | Tian Z, Chen X, Xu X (2020) Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates. Int J Extreme Manuf 2: 045104. https://doi.org/10.1088/2631-7990/abc26c doi: 10.1088/2631-7990/abc26c |
[10] | Chavoshi SZ, Luo XC (2016) Molecular dynamics simulation study of deformation mechanisms in 3C-SiC during nanometric cutting at elevated temperatures. Mat Sci Eng A-Struct 654: 400–417. https://doi.org/10.1016/j.msea.2015.11.100 doi: 10.1016/j.msea.2015.11.100 |
[11] | Wu Z, Liu W, Zhang L, et al. (2020) Amorphization and dislocation evolution mechanisms of single crystalline 6H-SiC. Acta Mater 182: 60–67. https://doi.org/10.1016/j.actamat.2019.10.037 doi: 10.1016/j.actamat.2019.10.037 |
[12] | Goel S, Stukowski A, Luo XC, et al. (2013) Anisotropy of single-crystal 3C-SiC during nanometric cutting. Modell Simul Mater Sci Eng 21: 065004. https://doi.org/10.1088/0965-0393/21/6/065004 doi: 10.1088/0965-0393/21/6/065004 |
[13] | Xiao GB, To S, Zhang GQ (2015) The mechanism of ductile deformation in ductile regime machining of 6H SiC. Comp Mater Sci 98: 178–188. https://doi.org/10.1016/j.commatsci.2014.10.045 doi: 10.1016/j.commatsci.2014.10.045 |
[14] | Tian D, Xu Z, Liu L, et al. (2021) In situ investigation of nanometric cutting of 3C-SiC using scanning electron microscope. Int J Adv Manuf Tech 115: 2299–2312. https://doi.org/10.1007/s00170-021-07278-x doi: 10.1007/s00170-021-07278-x |
[15] | Zhang T, Jiang F, Huang H, et al. (2021) Towards understanding the brittle–ductile transition in the extreme manufacturing. Int J Extreme Manuf 3: 022001. https://doi.org/10.1088/2631-7990/abdfd7 doi: 10.1088/2631-7990/abdfd7 |
[16] | Mishra M, Tangpatjaroen C, Szlufarska I (2014) Plasticity-controlled friction and wear in nanocrystalline SiC. J Am Ceram Soc 97: 1194–1201. https://doi.org/10.1111/jace.12810 doi: 10.1111/jace.12810 |
[17] | Liu Y, Li B, Kong L (2018) Molecular dynamics simulation of silicon carbide nanoscale material removal behavior. Ceram Int 44: 11910–11913. https://doi.org/10.1016/j.ceramint.2018.03.195 doi: 10.1016/j.ceramint.2018.03.195 |
[18] | Liu Y, Li B, Kong L (2018) A molecular dynamics investigation into nanoscale scratching mechanism of polycrystalline silicon carbide. Comp Mater Sci 148: 76–86. https://doi.org/10.1016/j.commatsci.2018.02.038 doi: 10.1016/j.commatsci.2018.02.038 |
[19] | Zhao L. Hu WJ, Zhang Q, et al. (2021) Atomistic origin of brittle-to-ductile transition behavior of polycrystalline 3C-SiC in diamond cutting. Ceram Int 47: 23895–23904. https://doi.org/10.1016/j.ceramint.2021.05.098 doi: 10.1016/j.ceramint.2021.05.098 |
[20] | Zhao L, Zhang JG, Fu YF, et al. (2022) Thermal softening-suppressed inter-granular embrittlement of polycrystalline 3C-SiC under diamond cutting. Mater Design 223: 111250. https://doi.org/10.1016/j.matdes.2022.111250 doi: 10.1016/j.matdes.2022.111250 |
[21] | Zhao L, Zhang JJ, Zhang JG, et al. (2023) Numerical simulation of materials-oriented ultra-precision diamond cutting: review and outlook. Int J Extreme Manuf 5: 022001. https://doi.org/10.1088/2631-7990/acbb42 doi: 10.1088/2631-7990/acbb42 |
[22] | Chavoshi SZ, Tschopp MA, Branicio PS (2019) Transition of deformation mechanisms in nanotwinned single crystalline SiC. Philos Mag 99: 21. https://doi.org/10.1080/14786435.2019.1637033 doi: 10.1080/14786435.2019.1637033 |
[23] | Chavoshi SZ, Xu S (2018) Tension-compression asymmetry in plasticity of nanotwinned 3C-SiC nanocrystals. J Appl Phys 124: 095103. https://doi.org/10.1063/1.5046949 doi: 10.1063/1.5046949 |
[24] | Wang ZG, Li JB, Gao F, et al. (2010) Tensile and compressive mechanical behavior of twinned silicon carbide nanowires. Acta Mater 58: 1963–1971. https://doi.org/10.1016/j.actamat.2009.11.039 doi: 10.1016/j.actamat.2009.11.039 |
[25] | Lin ZJ, Wang L, Zhang J, et al. (2010) Nanoscale twinning-induced elastic strengthening in silicon carbide nanowires. Scripta Mater 63: 981–984. https://doi.org/10.1016/j.scriptamat.2010.07.023 doi: 10.1016/j.scriptamat.2010.07.023 |
[26] | Chavoshi SZ, Xu S (2018) Twinning effects in the single/nanocrystalline cubic silicon carbide subjected to nanoindentation loading. Materialia 3: 304–325. https://doi.org/10.1016/j.mtla.2018.09.003 doi: 10.1016/j.mtla.2018.09.003 |
[27] | Vashishta P, Kalia RK, Nakano A, et al. (2007) Interaction potential for silicon carbide: A molecular dynamics study of elastic constants and vibrational density of states for crystalline and amorphous silicon carbide. J Appl Phys 101: 103515. https://doi.org/10.1063/1.2724570 doi: 10.1063/1.2724570 |
[28] | Kikuchi H, Kalia RK, Nakano A, et al. (2005) Brittle dynamic fracture of crystalline cubic silicon carbide (3C-SiC) via molecular dynamics simulation. J Appl Phys 98: 103524. https://doi.org/10.1063/1.2135896 doi: 10.1063/1.2135896 |
[29] | Zhao L, Zhang JJ, Zhang JG, et al. (2021) Atomistic investigation of machinability of monocrystalline 3C-SiC in elliptical vibration-assisted diamond cutting. Ceram Int 47: 2358–2366. https://doi.org/10.1016/j.ceramint.2020.09.078 doi: 10.1016/j.ceramint.2020.09.078 |
[30] | Stukowski A, Bulatov VV, Arsenlis A (2012) Automated identification and indexing of dislocations in crystal interfaces. Modelling Simul Mater Sci Eng 20: 085007. https://doi.org/10.1088/0965-0393/20/8/085007 doi: 10.1088/0965-0393/20/8/085007 |
[31] | Plimpton S (1995) Fast parallel algorithms for short-range molecular dynamics. J Comput Phys 117: 1–19. https://doi.org/10.1006/jcph.1995.1039 doi: 10.1006/jcph.1995.1039 |