Analysis and design of current mode logic based on CNTFET

Gennaro Gelao; Roberto Marani; Anna Gina Perri; Gennaro Gelao; Roberto Marani; Anna Gina Perri

doi:10.3934/matersci.2023052

AIMS Materials Science

2023, Volume 10, Issue 6: 965-980. doi: 10.3934/matersci.2023052

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Letter

Analysis and design of current mode logic based on CNTFET

1.
Department of Electrical and Information Engineering, Polytechnic University of Bari, Bari, 70126, Italy
2.
National Research Council of Italy (CNR), Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA), Bari, 70125, Italy

Received: 03 September 2023 Revised: 08 October 2023 Accepted: 12 October 2023 Published: 27 October 2023

In this letter we present a current mode gate based on differential pair as an application of carbon nanotube field effect transistors (CNTFETs). The proposed circuit has two output logic gates: one is NAND, and the other is AND. To simplify the circuit realization we use all CNTFETs of the same type, all with the same lengths and carbon nanotube symmetry indices (n, m). Complex circuits could be obtained in current mode replicating the differential pair CNTFET along the current path. The proposed procedure allows simulation of transfer characteristics from voltage input to current output but also from voltage input to voltage output. Moreover, we can measure simulated power dissipation and delay times.
- nanoelectronics,
- CNTFET,
- modeling,
- current mode logic,
- digital gates,
- advanced design system (ADS)
Citation: Gennaro Gelao, Roberto Marani, Anna Gina Perri. Analysis and design of current mode logic based on CNTFET[J]. AIMS Materials Science, 2023, 10(6): 965-980. doi: 10.3934/matersci.2023052

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Abstract

In this letter we present a current mode gate based on differential pair as an application of carbon nanotube field effect transistors (CNTFETs). The proposed circuit has two output logic gates: one is NAND, and the other is AND. To simplify the circuit realization we use all CNTFETs of the same type, all with the same lengths and carbon nanotube symmetry indices (n, m). Complex circuits could be obtained in current mode replicating the differential pair CNTFET along the current path. The proposed procedure allows simulation of transfer characteristics from voltage input to current output but also from voltage input to voltage output. Moreover, we can measure simulated power dissipation and delay times.

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