Characterisation of Ga<sub>1-x</sub>In<sub>x</sub>Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer

Jonathan P. Hayton; Andrew R.J. Marshall; Michael D. Thompson; Anthony Krier; Jonathan P. Hayton; Andrew R.J. Marshall; Michael D. Thompson; Anthony Krier

doi:10.3934/matersci.2015.2.86

AIMS Materials Science

2015, Volume 2, Issue 2: 86-96. doi: 10.3934/matersci.2015.2.86

Previous Article Next Article

Research article Special Issues

Characterisation of Ga_1-xIn_xSb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer

Physics Department, Lancaster University, Lancaster, LA1 4YB, UK

Received: 30 March 2015 Accepted: 10 May 2015 Published: 19 May 2015

GaInSb multiple quantum wells (MQW) grown on GaAs using an AlGaSb interface misfit (IMF) metamorphic buffer layer technique exhibit superior infrared photoluminescence (PL) at room temperature compared with MQW grown directly on GaSb. PL emission was obtained in the range from 1.7 μm (4 K) to 1.9 μm (300 K) from Ga1-xInxSb samples containing five compressively strained QW with In content x~0.3. Structural and optical characterisation confirms that the AlGaSb IMF growth technique is promising for the development of photonic devices operating at extended wavelengths based on GaAs substrates.
- photoluminescence,
- IMF,
- Interfacial Misfit Array,
- GaSb,
- AlGaSb,
- InGaSb,
- Quantum Well,
- MQW
Citation: Jonathan P. Hayton, Andrew R.J. Marshall, Michael D. Thompson, Anthony Krier. Characterisation of Ga1-xInxSb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer[J]. AIMS Materials Science, 2015, 2(2): 86-96. doi: 10.3934/matersci.2015.2.86

Related Papers:

Abstract

GaInSb multiple quantum wells (MQW) grown on GaAs using an AlGaSb interface misfit (IMF) metamorphic buffer layer technique exhibit superior infrared photoluminescence (PL) at room temperature compared with MQW grown directly on GaSb. PL emission was obtained in the range from 1.7 μm (4 K) to 1.9 μm (300 K) from Ga1-xInxSb samples containing five compressively strained QW with In content x~0.3. Structural and optical characterisation confirms that the AlGaSb IMF growth technique is promising for the development of photonic devices operating at extended wavelengths based on GaAs substrates.

References

[1]	Pascal-Delannoy F, Bouganot J, Allogho G, et al. (1992) MOVPE grown Ga0.6In0.4Sb photodiodes for 2.55um detection. Electron Lett 28: 531-532.
[2]	Bertru N, Baranov A, Cuminal Y, et al. (1998) Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy. Semicond Sci Technol 13: 936. doi: 10.1088/0268-1242/13/8/019
[3]	Krier A, Sherstnev V (2000) Powerful interface light emitting diodes for methane gas detection. J Phys D Appl Phys 33: 101. doi: 10.1088/0022-3727/33/2/301
[4]	Refaat T, Abedin M, Koch G, et al. (2003) Infrared detector characterization for CO2 DIAL measurement. in Proc. SPIE 5154, Lidar Remote Sensing for Environmental Monitoring IV, San Diego, California, USA.
[5]	Rotter TJ, Tatebayashi J, Senanayake P, et al. (2009) Continuous-Wave, Room-Temperature Operation of 2-μm Sb-Based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser Monolithically Grown on GaAs Substrates. Appl Phys Express 2: 112102. doi: 10.1143/APEX.2.112102
[6]	Demeo D, Shemelya C, Downs C, et al. (2014) GaSb Thermophotovoltaic Cells Grown on GaAs Substrate Using the Interfacial Misfit Array Method. J Electronic Mater 43: 902-908. doi: 10.1007/s11664-014-3029-1
[7]	Craig A, Marshall A, Tian Z, et al. (2013) Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays. Appl Phys Lett 103: 253502.
[8]	Huang S, Balakrishnan G, Huffaker D (2009) Interfacial misfit array formation for GaSb growth on GaAs. J Appl Phys 105: 103104. doi: 10.1063/1.3129562
[9]	Reyner C, Wang J, Nunna K, et al. (2011) Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction. Appl Phys Lett 99: 231906. doi: 10.1063/1.3666234
[10]	Akahane K, Yamamoto N, Gozu S, et al. (2006) (In)GaSb/AlGaSb quantum wells grown on Si substrates. Thin Solid Films 515: 4467-4470.
[11]	Jin S, Sweeney S (2003) High-Pressure Studies of Recombination Mechanisms in 1.3um GaInNAs Quantum-Well Lasers. IEEE J Sel Top Quantum Electron 9: 1196. doi: 10.1109/JSTQE.2003.819515

Reader Comments

Your name:*

Email:*
© 2015 the Author(s), licensee AIMS Press. This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0)