Analysis of temperature dependent power supply voltage drop in graphene nanoribbon and Cu based power interconnects

Sandip Bhattacharya; Debaprasad Das; Hafizur Rahaman; Sandip Bhattacharya; Debaprasad Das; Hafizur Rahaman

doi:10.3934/matersci.2016.4.1493

AIMS Materials Science

2016, Volume 3, Issue 4: 1493-1506. doi: 10.3934/matersci.2016.4.1493

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Research article Topical Sections

Analysis of temperature dependent power supply voltage drop in graphene nanoribbon and Cu based power interconnects

1.
School of VLSI Technology, Indian Institute of Engineering Science and Technology, Shibpur, India
2.
Department of Electronics and Communication Engineering, Assam University, Silchar, India

Received: 25 September 2016 Accepted: 31 October 2016 Published: 10 November 2016

In this paper, we propose a temperature dependent resistive model of multi layered graphene nanoribbon (MLGNR) and Cu based power interconnects. Using the proposed model, power supply voltage drop (IR-drop) analysis for 16 nm technology node is performed. The novelty in our work is that this is the first time a temperature dependent IR-Drop model for MLGNR and Cu interconnects is proposed. For a temperature range from 150 K to 450 K, the variation of resistance of MLGNR interconnect is ~2–5× times lesser than that of traditional copper based power interconnects. Our analysis shows that MLGNR based power interconnects can achieve ~1.5–3.5× reduction in IR-drop and ~1.5–3× reduction in propagation delay as compared with copper based interconnects for local, intermediate and global interconnects.
- temperature,
- graphene nanoribbon (GNR),
- interconnects,
- power supply voltage drop (IR-drop),
- mean free path (MFP),
- international technology roadmap for semiconductors (ITRS)
Citation: Sandip Bhattacharya, Debaprasad Das, Hafizur Rahaman. Analysis of temperature dependent power supply voltage drop in graphene nanoribbon and Cu based power interconnects[J]. AIMS Materials Science, 2016, 3(4): 1493-1506. doi: 10.3934/matersci.2016.4.1493

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Abstract

In this paper, we propose a temperature dependent resistive model of multi layered graphene nanoribbon (MLGNR) and Cu based power interconnects. Using the proposed model, power supply voltage drop (IR-drop) analysis for 16 nm technology node is performed. The novelty in our work is that this is the first time a temperature dependent IR-Drop model for MLGNR and Cu interconnects is proposed. For a temperature range from 150 K to 450 K, the variation of resistance of MLGNR interconnect is ~2–5× times lesser than that of traditional copper based power interconnects. Our analysis shows that MLGNR based power interconnects can achieve ~1.5–3.5× reduction in IR-drop and ~1.5–3× reduction in propagation delay as compared with copper based interconnects for local, intermediate and global interconnects.

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