Research article Special Issues

Quantitative characterization and modeling of sub-bandgap absorption features in thin oxide films from spectroscopic ellipsometry data

  • Received: 19 May 2015 Accepted: 16 September 2015 Published: 08 October 2015
  • Analytic representations of the complex dielectric function, which describe various types of materials, are needed for the analysis of optical measurements, in particularly, ellipsometric data. Here, we examine an improved multi-oscillator Tauc-Lorentz (TL) model with a constraint on the band-gap parameter Eg, which forces it to be common for all TL oscillators, and possibility to represent reasonably weak absorption features below the bandgap by inclusion of additional unbounded Lorentz and/or Gaussian oscillators with transition energies located below Eg. We conclude that the proposed model is the most appropriate for the characterization of various materials with sub-band absorption features and provides meaningful value for the energy bandgap. A few examples to illustrate the use of modified model have been provided.

    Citation: Dmitriy V. Likhachev, Natalia Malkova, Leonid Poslavsky. Quantitative characterization and modeling of sub-bandgap absorption features in thin oxide films from spectroscopic ellipsometry data[J]. AIMS Materials Science, 2015, 2(4): 356-368. doi: 10.3934/matersci.2015.4.356

    Related Papers:

  • Analytic representations of the complex dielectric function, which describe various types of materials, are needed for the analysis of optical measurements, in particularly, ellipsometric data. Here, we examine an improved multi-oscillator Tauc-Lorentz (TL) model with a constraint on the band-gap parameter Eg, which forces it to be common for all TL oscillators, and possibility to represent reasonably weak absorption features below the bandgap by inclusion of additional unbounded Lorentz and/or Gaussian oscillators with transition energies located below Eg. We conclude that the proposed model is the most appropriate for the characterization of various materials with sub-band absorption features and provides meaningful value for the energy bandgap. A few examples to illustrate the use of modified model have been provided.


    加载中
    [1] Takeuchi H, Ha D, King T-J (2004) Observation of bulk HfO2 defects by spectroscopic ellipsometry. J Vac Sci Technol A 22: 1337-1341. doi: 10.1116/1.1705593
    [2] Nguyen NV, Davydov AV, Chandler-Horowitz D, et al. (2005) Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon. Appl Phys Lett 87: 192903. doi: 10.1063/1.2126136
    [3] Price J, Lysaght PS, Song SC, et al. (2007) Identification of sub-band-gap absorption features at the HfO2/Si(100) interface via spectroscopic ellipsometry. Appl Phys Lett 91: 061925. doi: 10.1063/1.2769389
    [4] Ferrieu F, Dabertrand K, Lhostis S, et al. (2007) Observation of HfO2 thin films by deep UV spectroscopic ellipsometry. J Non-Cryst Solids 353: 658-662. doi: 10.1016/j.jnoncrysol.2006.10.032
    [5] Price J, Lysaght PS, Song SC, et al. (2008) Observation of interfacial electrostatic field-induced changes in the silicon dielectric function using spectroscopic ellipsometry. Phys. Status Solidi A 205: 918-921. doi: 10.1002/pssa.200777836
    [6] Price J, Bersuker G, Lysaght PS (2009) Identification of interfacial defects in high-κ gate stack films by spectroscopic ellipsometry. J Vac Sci Technol B 27: 310-312. doi: 10.1116/1.3021045
    [7] Price J, Bersuker G, Lysaght PS (2012) Identification of electrically active defects in thin dielectric films by spectroscopic ellipsometry. J Appl Phys 111: 043507. doi: 10.1063/1.3684605
    [8] Vasić R, Consiglio S, Clark RD, et al. (2013) Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf1-xZrxO2 gate dielectrics deposited by a cyclical deposition and annealing scheme. J Appl Phys 113: 234101. doi: 10.1063/1.4811446
    [9] Fan X, Liu H, Zhang X (2014) Identification of optimal ALD process conditions of Nd2O3 on Si by spectroscopic ellipsometry. Appl Phys A 114: 545-550.
    [10] Fan X, Liu H, Zhang X, et al. (2015) Optical characteristics of H2O-based and O3-based HfO2 films deposited by ALD using spectroscopy ellipsometry. Appl Phys A 119: 957-963. doi: 10.1007/s00339-015-9048-9
    [11] Collins RW, Ferlauto AS (2005) Optical physics of materials, In: Tompkins HG, Irene EA (Eds.), Handbook of Ellipsometry, Norwich: William Andrew Publishing/ Noyes, 93-235.
    [12] Jellison GE Jr. (2005) Data analysis for spectroscopic ellipsometry, In: Tompkins HG, Irene EA (Eds.), Handbook of Ellipsometry, Norwich: William Andrew Publishing/ Noyes, 237-296.
    [13] Petrik P (2014) Parameterization of the dielectric function of semiconductor nanocrystals. Physica B 453: 2-7. doi: 10.1016/j.physb.2014.03.065
    [14] Cho YJ, Nguyen NV, Richter CA, et al. (2002) Spectroscopic ellipsometry characterization of high-κ dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties. Appl Phys Lett 80: 1249-1251. doi: 10.1063/1.1448384
    [15] Sancho-Parramon J, Modreanu M, Bosch S, et al. (2008) Optical characterization of HfO2 by spectroscopic ellipsometry: Dispersion models and direct data inversion. Thin Solid Films 516: 7990-7995. doi: 10.1016/j.tsf.2008.04.007
    [16] Jellison, Jr GE, Modine FA (1996) Parameterization of the optical functions of amorphous materials in the interband region. Appl Phys Lett 69: 371-373; Erratum: ‘‘Parameterization of the optical functions of amorphous materials in the interband region'' [Appl. Phys. Lett. 69, 371 (1996)], idid. 69: 2137. doi: 10.1063/1.118064
    [17] Ferlauto AS, Ferreira GM, Pearce JM, et al. (2002) Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics. J Appl Phys 92: 2424-2436. doi: 10.1063/1.1497462
    [18] Ferlauto AS, Ferreira GM, Pearce JM, et al. (2004) Analytical model for the optical functions of amorphous semiconductors and its applications for thin film solar cells. Thin Solid Films 455-456: 388-392. doi: 10.1016/j.tsf.2003.11.234
    [19] Foldyna M, Postava K, Bouchala J, et al. (2004) Model dielectric functional of amorphous materials including Urbach tail, In: Pistora J, Postava K, Hrabovsky M, et al. (Eds.), Microwave and Optical Technology 2003, Ostrava, Czech Republic, August 11-15, 2003, SPIE Proc. 5445: 301-305.
    [20] Falahatgar SS, Ghodsi FE (2013) A developed model for the determination of the dielectric function for some absorbing thin films using pseudo-Urbach tail. Physica B 412: 4-11. doi: 10.1016/j.physb.2012.12.011
    [21] Price J, Hung PY, Rhoad T, et al. (2004) Spectroscopic ellipsometry characterization of HfxSiyOz films using the Cody-Lorentz parameterized model. Appl Phys Lett 85: 1701-1703. doi: 10.1063/1.1784889
    [22] Kamineni VK, Hilfiker JN, Freeouf JL, et al. (2011) Extension of far UV spectroscopic ellipsometry studies of high-κ dielectric films to 130 nm. Thin Solid Films 519: 2894-2898. doi: 10.1016/j.tsf.2010.12.080
    [23] Mei JJ, Chen H, Shen WZ, et al. (2006) Optical properties and local bonding configurations of hydrogenated amorphous silicon nitride thin films. J Appl Phys 100: 073516. doi: 10.1063/1.2356915
    [24] Eiamchai P, Chindaudom P, Pokaipisit A, et al. (2009) A spectroscopic ellipsometry study of TiO2 thin films prepared by ion-assisted electron-beam evaporation. Curr Appl Phys 9: 707-712. doi: 10.1016/j.cap.2008.06.011
    [25] Avci N, Smet PF, Poelman H, et al. (2009) Characterization of TiO2 powders and thin films prepared by non-aqueous sol-gel techniques. J Sol-Gel Sci Technol 52: 424-431. doi: 10.1007/s10971-009-2028-9
    [26] Peiponen K-E, Vartiainen EM (1991) Kramers-Kronig relations in optical data inversion. Phys Rev B 44: 8301-8303. doi: 10.1103/PhysRevB.44.8301
    [27] De Sousa Meneses D, Malki M, Echegut P (2006) Structure and lattice dynamics of binary lead silicate glasses investigated by infrared spectroscopy. J Non-Cryst Solids 352: 769-776. doi: 10.1016/j.jnoncrysol.2006.02.004
    [28] Jellison, Jr. GE, Modine FA (1983) Optical functions of silicon between 1.7 and 4.7 eV at elevated temperatures. Phys Rev B 27: 7466-7472.
    [29] Lautenschlager P, Garriga M, Viña L, et al. (1987) Temperature dependence of the dielectric function and interband critical points in silicon. Phys Rev B 36: 4821-4830. doi: 10.1103/PhysRevB.36.4821
    [30] Vineis CJ (2005) Complex dielectric function of biaxial tensile strained silicon by spectroscopic ellipsometry. Phys Rev B 71: 245205. doi: 10.1103/PhysRevB.71.245205
    [31] Awazu K, Kawazoe H, Saito Y, et al. (1991) Structural imperfections in silicon dioxide films identified with vacuum ultraviolet optical absorption measurements. Appl Phys Lett 59: 528-530. doi: 10.1063/1.105428
    [32] Awazu K, Kawazoe H, Muta K-i (1991) Optical properties of oxygen-deficient centers in silica glasses fabricated in H2 or vacuum ambient. J Appl Phys 70: 69-74. doi: 10.1063/1.350245
    [33] Terada N, Haga T, Miyata N, et al. (1992) Optical absorption in ultrathin silicon oxide films near the SiO2/Si interface. Phys Rev B 46: 2312-2318. doi: 10.1103/PhysRevB.46.2312
    [34] Aarik J, Mändar H, Kirm M, et al. (2004) Optical characterization of HfO2 thin films grown by atomic layer deposition. Thin Solid Films 466: 41-47. doi: 10.1016/j.tsf.2004.01.110
    [35] Lucovsky G, Zhang Y, Luning J, et al. (2005) Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics. Microelectron Eng 80: 110-113. doi: 10.1016/j.mee.2005.04.052
    [36] Hoppe EE, Sorbello RS, Aita CR (2007) Near-edge optical absorption behavior of sputter deposited hafnium dioxide. J Appl Phys 101: 123534. doi: 10.1063/1.2750406
    [37] Ferrieu F, Dabertrand K, Lhostis S, et al. (2007) Observation of HfO2 thin films by deep UV spectroscopic ellipsometry. J Non-Cryst Solids 353: 658-662. doi: 10.1016/j.jnoncrysol.2006.10.032
    [38] Martínez FL, Toledano-Luque M, Gandía JJ, et al. (2007) Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering. J Phys D: Appl Phys 40: 5256-5265. doi: 10.1088/0022-3727/40/17/037
    [39] Hill DH, Bartynski RA, Nguyen NV, et al. (2008) The relationship between local order, long range order, and sub-band-gap defects in hafnium oxide and hafnium silicate films. J Appl Phys 103: 093712. doi: 10.1063/1.2909442
    [40] Park J-W, Lee D-K, Lim D, et al. (2008) Optical properties of thermally annealed hafnium oxide and their correlation with structural change. J Appl Phys 104: 033521. doi: 10.1063/1.2961326
    [41] Bersch E, Di M, Consiglio S, et al. (2010) Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy. J Appl Phys 107: 043702. doi: 10.1063/1.3284961
    [42] Xu K, Sio H, Kirillov OA, et al. (2013) Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry. J Appl Phys 113: 024504. doi: 10.1063/1.4774038
    [43] Di M, Bersch E, Diebold AC, et al. (2011) Comparison of methods to determine bandgaps of ultrathin HfO2 films using spectroscopic ellipsometry. J Vac Sci Technol A 29: 041001.
    [44] Franta D, Ohlídal I, Nečas D, et al. (2011) Optical characterization of HfO2 thin films. Thin Solid Films 519: 6085-6091. doi: 10.1016/j.tsf.2011.03.128
    [45] Nguyen NV, Han J-P, Kim JY, et al. (2003) Optical properties of jet-vapor-deposited TiAlO and HfAlO determined by vacuum utraviolet spectroscopic ellipsometry, In: Seiler DG, Diebold AC, Shaffner TJ, et al. (Eds.), Characterization and Metrology for ULSI Technology 2003, Austin, TX, U.S.A., March 24-28, 2003, AIP Conf. Proc. 683: 181-185.
    [46] Nguyen NV, Sayan S, Levin I, et al. (2005) Optical band gaps and composition dependence of hafnium-aluminate thin films grown by atomic layer chemical vapor deposition. J Vac Sci Technol A 23: 1706-1713.
    [47] Wang XF, Li Q, Egerton RF, et al. (2007) Effect of Al addition on the microstructure and electronic structure of HfO2 film. J Appl Phys 101: 013514. doi: 10.1063/1.2405741
    [48] Park TJ, Kim JH, Jang JH, et al. (2010) Reduction of electrical defects in atomic layer deposited HfO2 films by Al doping. Chem Mater 22: 4175-4184. doi: 10.1021/cm100620x
    [49] Sandberg RL, Allred DD, Lunt S, et al. (2004) Optical properties and application of uranium-based thin films for the extreme ultraviolet and soft x-ray region, In: Soufli R, Seely JF (Eds.), Optical Constants of Materials for UV to X-Ray Wavelengths, Denver, CO, U.S.A., August 2, 2004, SPIE Proc. 5538: 107-118.
    [50] Meek TT, von Roedern B (2008) Semiconductor devices fabricated from actinide oxides. Vacuum 83: 226-228. doi: 10.1016/j.vacuum.2008.04.005
    [51] Kruschwitz CA, Mukhopadhyay S, Schwellenbach D, et al. (2014) Semiconductor neutron detectors using depleted uranium oxide, In: Burger A, Franks L, James RB, et al. (Eds.), Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI, San Diego, CA, U.S.A., August 17, 2014, SPIE Proc. 9213: 92130C-1-92130C-9.
    [52] Chen Q, Lai X, Bai B, et al. (2010) Structural characterization and optical properties of UO2 thin films by magnetron sputtering. Appl Surf Sci 256: 3047-3050. doi: 10.1016/j.apsusc.2009.11.071
    [53] He H, Andersson DA, Allred DD, et al. (2013) Determination of the insulation gap of uranium oxides by spectroscopic ellipsometry and density functional theory. J Phys Chem C 117: 16540-16551. doi: 10.1021/jp401149m
    [54] Khilla MA, Rofail NH (1986) Optical absorption edge of uranium trioxide phases: Part I. Radiochim Acta 40: 155-158.
  • Reader Comments
  • © 2015 the Author(s), licensee AIMS Press. This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0)
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Metrics

Article views(6081) PDF downloads(1047) Cited by(2)

Article outline

Figures and Tables

Figures(4)  /  Tables(4)

/

DownLoad:  Full-Size Img  PowerPoint
Return
Return

Catalog