Moving row of antiplane shear cracks within one-dimensional piezoelectric quasicrystals

Geoffrey E. Tupholme; Geoffrey E. Tupholme

doi:10.3934/matersci.2016.4.1365

AIMS Materials Science

2016, Volume 3, Issue 4: 1365-1381. doi: 10.3934/matersci.2016.4.1365

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Moving row of antiplane shear cracks within one-dimensional piezoelectric quasicrystals

Geoffrey E. Tupholme ^,

School of Engineering and Informatics, University of Bradford, Bradford BD7 1DP, UK

Received: 18 August 2016 Accepted: 08 October 2016 Published: 14 October 2016

Closed-form expressions are deduced and discussed, using an extended form of the classical dislocation layer method, for the phonon and phason stress and electric displacement components and intensity factors generated in one-dimensional piezoelectric quasicrystals by a collinear row of moving shear cracks. Representative numerical results are presented graphically. Additionally, this analysis yields the fields of a single crack moving in a finite piezoelectric quasicrystalline plate and also of a moving edge crack in a plate
- moving antiplane shear cracks,
- piezoelectric quasicrystals,
- dislocation layers
Citation: Geoffrey E. Tupholme. Moving row of antiplane shear cracks within one-dimensional piezoelectric quasicrystals[J]. AIMS Materials Science, 2016, 3(4): 1365-1381. doi: 10.3934/matersci.2016.4.1365

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Abstract

Closed-form expressions are deduced and discussed, using an extended form of the classical dislocation layer method, for the phonon and phason stress and electric displacement components and intensity factors generated in one-dimensional piezoelectric quasicrystals by a collinear row of moving shear cracks. Representative numerical results are presented graphically. Additionally, this analysis yields the fields of a single crack moving in a finite piezoelectric quasicrystalline plate and also of a moving edge crack in a plate

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