Thermal performance of LED fixed on CVD processed ZnO thin film on Al substrates at various O<sub>2</sub> gas flow rates

Nur Jassriatul Aida binti Jamaludin; Shanmugan Subramani; Nur Jassriatul Aida binti Jamaludin; Shanmugan Subramani

doi:10.3934/matersci.2018.2.246

AIMS Materials Science

2018, Volume 5, Issue 2: 246-256. doi: 10.3934/matersci.2018.2.246

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Research article Topical Sections

Thermal performance of LED fixed on CVD processed ZnO thin film on Al substrates at various O₂ gas flow rates

Nano Opto Electronic Lab (NOR), School of Physics, Universiti Sains Malaysia (USM) 11800 Minden, Penang, Malaysia

Received: 21 December 2017 Accepted: 12 March 2018 Published: 20 March 2018

Zinc oxide thin films were deposited on aluminium (Al) substrates by chemical vapor deposition (CVD) method and used as thermal interface materials in LED packages. Various driving current were used to test the thin film performance on LED and measure the parameter, such as thermal resistance and junction temperature. Field Emission Scanning Electron Microscopy analysis of ZnO thin film surface prepared at 5 sccm showed dense and uniform particles, and this is verified by Atomic Force Microscopy analysis. Energy dispersive X-ray Analysis of the thin films confirmed that the thin film are Zn rich. Low thermal resistance (33.92 K/W) and high value of difference in junction temperature (∆T_j = 4.8 ℃) were noticed with ZnO thin film prepared at 5 sccm gas flow for 700 mA when compared with bare Al boundary conditions. Overall, ZnO thin film at 5 sccm flow can be effectively used as thermal interface material for high power LEDs.
- light emitting diode,
- zinc oxide,
- CVD,
- junction temperature,
- thermal transient analysis,
- thermal management
Citation: Nur Jassriatul Aida binti Jamaludin, Shanmugan Subramani. Thermal performance of LED fixed on CVD processed ZnO thin film on Al substrates at various O2 gas flow rates[J]. AIMS Materials Science, 2018, 5(2): 246-256. doi: 10.3934/matersci.2018.2.246

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Abstract

Zinc oxide thin films were deposited on aluminium (Al) substrates by chemical vapor deposition (CVD) method and used as thermal interface materials in LED packages. Various driving current were used to test the thin film performance on LED and measure the parameter, such as thermal resistance and junction temperature. Field Emission Scanning Electron Microscopy analysis of ZnO thin film surface prepared at 5 sccm showed dense and uniform particles, and this is verified by Atomic Force Microscopy analysis. Energy dispersive X-ray Analysis of the thin films confirmed that the thin film are Zn rich. Low thermal resistance (33.92 K/W) and high value of difference in junction temperature (∆T_j = 4.8 ℃) were noticed with ZnO thin film prepared at 5 sccm gas flow for 700 mA when compared with bare Al boundary conditions. Overall, ZnO thin film at 5 sccm flow can be effectively used as thermal interface material for high power LEDs.

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