Catalysts based on Fenton reaction for SiC wafer in chemical magnetorheological finishing

Huazhuo Liang; Jiabin Lu; Qiusheng Yan; Huazhuo Liang; Jiabin Lu; Qiusheng Yan

doi:10.3934/matersci.2018.6.1112

AIMS Materials Science

2018, Volume 5, Issue 6: 1112-1123. doi: 10.3934/matersci.2018.6.1112

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Research article Special Issues

Catalysts based on Fenton reaction for SiC wafer in chemical magnetorheological finishing

Guangdong University of Technology, Guangzhou 510006, China

Received: 31 August 2018 Accepted: 07 November 2018 Published: 15 November 2018

Aiming at the chemical magnetorheological finishing (CMRF) of single crystal silicon carbide (SiC) based on the Fenton reaction, concentration of hydroxyl radical produced in Fenton reaction and its influence on chemical reaction rate of SiC were detected by visible spectrophotometry, and catalytic ability of different particles was detected by the method of immersion corrosion test. The experimental results showed that surface roughness is better when the carbonyl iron powder (CIP) is used as catalyst. The lower value of pH, the higher content of hydroxyl radicals. The hydroxyl radical can react with SiC surface to form a softer SiO₂ oxide layer. The acid environment can promote Fenton reaction and the polishing effect is better, while the oxidation layer of SiC surface is converted to silicate in the alkaline environmental. The SiC after CMRF can obtain the smooth surface of the surface roughness Ra 0.0817 nm when the pH value is 9.
- chemical magnetorheological finishing,
- Fenton reaction,
- silicon carbide (SiC),
- catalyst
Citation: Huazhuo Liang, Jiabin Lu, Qiusheng Yan. Catalysts based on Fenton reaction for SiC wafer in chemical magnetorheological finishing[J]. AIMS Materials Science, 2018, 5(6): 1112-1123. doi: 10.3934/matersci.2018.6.1112

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Abstract

Aiming at the chemical magnetorheological finishing (CMRF) of single crystal silicon carbide (SiC) based on the Fenton reaction, concentration of hydroxyl radical produced in Fenton reaction and its influence on chemical reaction rate of SiC were detected by visible spectrophotometry, and catalytic ability of different particles was detected by the method of immersion corrosion test. The experimental results showed that surface roughness is better when the carbonyl iron powder (CIP) is used as catalyst. The lower value of pH, the higher content of hydroxyl radicals. The hydroxyl radical can react with SiC surface to form a softer SiO₂ oxide layer. The acid environment can promote Fenton reaction and the polishing effect is better, while the oxidation layer of SiC surface is converted to silicate in the alkaline environmental. The SiC after CMRF can obtain the smooth surface of the surface roughness Ra 0.0817 nm when the pH value is 9.

References

[1]	Raynaud C, Tournier D, Morel H, et al. (2010) Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices. Diam Relat Mater 19: 1–6. doi: 10.1016/j.diamond.2009.09.015
[2]	Okumura H (2006) Present status and future prospect of widegap semiconductor high-power devices. Jpn J Appl Phys 45: 7565–7586. doi: 10.1143/JJAP.45.7565
[3]	Kato T, Wada K, Hozomi E, et al. (2007) High throughput SiC wafer polishing with good surface morphology. Mater Sci Forum 556–557: 753–756.
[4]	Zhou L (1997) Chemomechanical polishing of silicon carbide. J Electrochem Soc 144: L161–L163. doi: 10.1149/1.1837711
[5]	Aida H, Doi T, Takeda H, et al. (2012) Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials. Curr Appl Phys 12: S41–S46. doi: 10.1016/j.cap.2012.02.016
[6]	Chen XF, Xu XG, Hu XB (2007) Anisotropy of chemical mechanical polishing in silicon carbide substrates. Mater Sci Eng B-Adv 142: 28–30. doi: 10.1016/j.mseb.2007.06.015
[7]	Kubota A, Yoshimura M, Fukuyama S, et al. (2012) Planarization of C-face 4H-SiC substrate using Fe particles and hydrogen peroxide solution. Precis Eng 36: 137–140. doi: 10.1016/j.precisioneng.2011.09.003
[8]	Shi XL, Pan GS, Zhou Y, et al. (2013) Extended study of the atomic step-terrace structure on hexagonal SiC (0001) by chemical-mechanical planarization. Appl Surf Sci 284: 195–206.
[9]	Pignatello JJ, Oliveros E, MacKay A (2006) Advanced oxidation processes for organic contaminant destruction based on the Fenton reaction and related chemistry. Crit Rev Env Sci Tec 36: 1–84. doi: 10.1080/10643380500326564
[10]	Zhu JT, Lu JB, Pan JS, et al. (2012) Study of cluster magnetorheological-chemical mechanical polishing technology for the atomic scale ultra-smooth surface planarization of SiC. Adv Mater Res 797: 284–290.
[11]	Liang HZ, Lu JB, Pan JS, et al. (2018) Material removal process of single-crystal SiC in chemical-magnetorheological compound finishing. Int J Adv Manuf Tech 94: 2939–2948. doi: 10.1007/s00170-017-1098-z
[12]	Liang HZ, Yan QS, Lu JB, et al. (2017) Experiment on chemical magnetorheological finishing of SiC single crystal wafer. Mater Sci Forum 874: 407–414.
[13]	Zhou Y, Pan GS, Shi XL, et al. (2014) XPS, UV-vis spectroscopy and AFM studies on removal mechanisms of Si-face SiC wafer chemical mechanical polishing (CMP). Appl Surf Sci 316: 643–648. doi: 10.1016/j.apsusc.2014.08.011
[14]	Ek M, Gierer J, Jansbo K (1989) Study on the selectivity of bleaching with oxygen-containing species. Holzforschung 43: 391–396. doi: 10.1515/hfsg.1989.43.6.391
[15]	Zhou Y, Pan GS, Shi XL, et al. (2014) Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nanoparticles in slurry. Surf Coat Tech 251: 48–55. doi: 10.1016/j.surfcoat.2014.03.044

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