Development of low temperature technology for the growth of wide band gap semiconductor nanowires

David Jishiashvili; Zeinab Shiolashvili; Archil Chirakadze; Alexander Jishiashvili; Nino Makhatadze; Kakha Gorgadze; David Jishiashvili; Zeinab Shiolashvili; Archil Chirakadze; Alexander Jishiashvili; Nino Makhatadze; Kakha Gorgadze

doi:10.3934/matersci.2016.2.470

AIMS Materials Science

2016, Volume 3, Issue 2: 470-485. doi: 10.3934/matersci.2016.2.470

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Development of low temperature technology for the growth of wide band gap semiconductor nanowires

Institute of Cybernetics, Georgian Technical University, 77 Kostava St., 0175, Tbilisi, Georgia

Received: 26 February 2016 Accepted: 06 April 2016 Published: 08 April 2016

In₂Ge₂O₇,Ge₃N₄,In₂O₃and germanium nanowires were synthesized by the developed hydrazine (N₂H₄)-based technology. Annealing of germanium or Ge+In sources in the vapor of N₂H₄+3 mol.% H₂O caused the formation of volatile GeO and In₂O molecules in the hot zone. These molecules were transferred to the Si substrate, which was placed in the could zone of a reactor. After interacting with hydrazine decomposition products (NH₃, NH₂, NH, H₂, H) and water, Ge₃N₄ nanowires and nanobelts were produced on the Ge source in the temperature range of 500–520 ºC. The growth temperature of Ge₃N₄ nanowires in hydrazine vapor was by 350 ºC lower than the temperature reported in the literature. Using In+Ge source the tapered In₂O₃ nanowires were formed on the Si substrate at 400 ºC. At 420–440 ºC the mixture of In₂O₃ and Ge nanowires were synthesized, while at 450 ºC In₂Ge₂O₇ nanowires were produced, with InN nanocrystals growing on their stems. The possible chemical reactions for the synthesis of these nanostructures were evaluated. The growth temperatures of both, In₂Ge₂O₇and InN nanostructures were by 50–150 ºC lower than that, reported in the literature. The results of this work clearly demonstrate the ability of hydrazine vapor to reduce the growth temperature of nitride and oxide nanomaterials.
- nanowires,
- In₂Ge₂O₇,
- Ge₃N₄,
- I₂O₃,
- hydrazine,
- InN
Citation: David Jishiashvili, Zeinab Shiolashvili, Archil Chirakadze, Alexander Jishiashvili, Nino Makhatadze, Kakha Gorgadze. Development of low temperature technology for the growth of wide band gap semiconductor nanowires[J]. AIMS Materials Science, 2016, 3(2): 470-485. doi: 10.3934/matersci.2016.2.470

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Abstract

In₂Ge₂O₇,Ge₃N₄,In₂O₃and germanium nanowires were synthesized by the developed hydrazine (N₂H₄)-based technology. Annealing of germanium or Ge+In sources in the vapor of N₂H₄+3 mol.% H₂O caused the formation of volatile GeO and In₂O molecules in the hot zone. These molecules were transferred to the Si substrate, which was placed in the could zone of a reactor. After interacting with hydrazine decomposition products (NH₃, NH₂, NH, H₂, H) and water, Ge₃N₄ nanowires and nanobelts were produced on the Ge source in the temperature range of 500–520 ºC. The growth temperature of Ge₃N₄ nanowires in hydrazine vapor was by 350 ºC lower than the temperature reported in the literature. Using In+Ge source the tapered In₂O₃ nanowires were formed on the Si substrate at 400 ºC. At 420–440 ºC the mixture of In₂O₃ and Ge nanowires were synthesized, while at 450 ºC In₂Ge₂O₇ nanowires were produced, with InN nanocrystals growing on their stems. The possible chemical reactions for the synthesis of these nanostructures were evaluated. The growth temperatures of both, In₂Ge₂O₇and InN nanostructures were by 50–150 ºC lower than that, reported in the literature. The results of this work clearly demonstrate the ability of hydrazine vapor to reduce the growth temperature of nitride and oxide nanomaterials.

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